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Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)

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journal contribution
posted on 2025-05-09, 05:40 authored by M. W. Radny, G. A. Shah, S. R. Schofield, P. V. Smith, N. J. Curson
We have carried out extensive calculations of the Ge(001)c4 X 2 clean surface using a slab containing 8, 10, and 12 Ge layers, respectively. These calculations have again been performed using the VASP code. The change in the electronic structure with increasing number of layers also affects the relationship between the back bond and dangling bond surface states.

History

Journal title

Physical Review Letters

Volume

103

Issue

18

Publisher

American Physical Society

Language

  • en, English

College/Research Centre

Faculty of Science and Information Technology

School

School of Mathematical and Physical Sciences

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