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Reaction paths of phosphine dissociation on silicon (001)

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posted on 2025-05-10, 12:48 authored by O. Warschkow, N. J. Curson, S. R. Schofield, N. A. Marks, H. F. Wilson, M. W. Radny, P. V. Smith, T. C. G. Reusch, D. R. McKenzie, M. Y. Simmons
Using density functional theory and guided by extensive scanning tunneling microscopy (STM) image data, we formulate a detailed mechanism for the dissociation of phosphine (PH₃) molecules on the Si(001) surface at room temperature. We distinguish between a main sequence of dissociation that involves PH₂+H, PH+2H, and P+3H as observable intermediates, and a secondary sequence that gives rise to PH+H, P+2H, and isolated phosphorus adatoms. The latter sequence arises because PH₂ fragments are surprisingly mobile on Si(001) and can diffuse away from the third hydrogen atom that makes up the PH₃ stoichiometry. Our calculated activation energies describe the competition between diffusion and dissociation pathways and hence provide a comprehensive model for the numerous adsorbate species observed in STM experiments.

Funding

ARC

CE110001027

History

Journal title

Journal of Chemical Physics

Volume

144

Issue

1

Publisher

AIP Publishing

Language

  • en, English

College/Research Centre

Faculty of Science

School

School of Mathematical and Physical Sciences

Rights statement

Reproduced from Warschkow, O.; Curson, N. J.; Schofield, S. R.; Marks, N. A.; Wilson, H. F.; Radny, M. W.; Smith, P. V.; Reusch, T. C. G.; McKenzie, D. R.; Simmons, M. Y., Journal of Chemical Physics, Vol. 144, Issue 1, (2016), with the permission of AIP Publishing.

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