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Phosphine dissociation on the Si(001) surface

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posted on 2025-05-08, 18:15 authored by H. F. Wilson, O. Warschkow, N. A. Marks, S. R. Schofield, N. J. Curson, P. V. Smith, M. W. Radny, D. R. McKenzie, M. Y. Simmons
Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).

History

Journal title

Physical Review Letters

Volume

93

Issue

22

Publisher

American Physical Society

Language

  • en, English

College/Research Centre

Faculty of Science and Information Technology

School

School of Mathematical and Physical Sciences

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