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Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

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posted on 2025-05-10, 20:39 authored by Xinwei Guan, Zhihao Lei, Tom Wu, Xuechao Yu, Chun-Ho Lin, Jing-Kai Huang, Chien-Yu Huang, Long Hu, Feng Li, Ajayan VinuAjayan Vinu, Jiabao Yi
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

History

Journal title

Small

Volume

18

Issue

38

Article number

2203311

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Language

  • en, English

College/Research Centre

College of Engineering, Science and Environment

School

School of Engineering

Rights statement

© 2022 The Authors. Small published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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