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Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface

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posted on 2025-05-10, 23:28 authored by M. W. Radny, P. V. Smith, T. C. G. Reusch, O. Warschkow, N. A. Marks, H. F. Wilson, N. J. Curson, S. R. Schofield, D. R. McKenzie, M. Y. Simmons
We present a detailed voltage-dependent scanning tunneling microscopy study of a single phosphorus atom in the Si(001) surface. Using density functional theory calculations we show that tip-induced charging results in reversible structural and electronic changes. These changes are caused by charge transfer from delocalized surface states to localized states associated with the presence of the phosphorus atom. While two stable geometric configurations are predicted, only the higher energy configuration is consistent with experiment.

History

Journal title

Physical Review B (Condensed Matter and Materials Physics)

Volume

74

Issue

11

Pagination

113311-1-113311-4

Publisher

American Institute of Physics

Language

  • en, English

College/Research Centre

Faculty of Science and Information Technology

School

School of Mathematical and Physical Sciences

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